ZhETF, Vol. 148,
p. 1225 (December 2015)
(English translation - JETP,
Vol. 121, No. 6,
available online at www.springer.com
INFRARED PHOTOLUMINESCENCE FROM GeSi NANOCRYSTALS EMBEDDED IN A GERMANIUM-SILICATE MATRIX
Volodin V.A., Gambaryan M.P., Cherkov A.G., Vdovin V.I., Stoffel M., Rinnert H., Vergnat M.
Received: April 24, 2015
We investigate the structural and optical properties of GeO/SiO2 multilayers obtained by evaporation of GeO2 and SiO2 powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after post-growth annealing at 800 . High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500-1600 nm. The temperature dependence of the photoluminescence is studied.